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| TYPE | DESCRIPTION |
| Surface Mount | YES |
| Number of Terminals | 2 |
| Transistor Element Material | SILICON |
| ECCN (US) | EAR99 |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Process Technology | LDMOS |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum VSWR | 5 |
| Maximum Continuous Drain Current (A) | 33 |
| Maximum Drain Source Resistance (mOhm) | 135@6.15V |
| Typical Forward Transconductance (S) | 13 |
| Output Power (W) | 130(Typ) |
| Typical Power Gain (dB) | 12 |
| Maximum Frequency (MHz) | 3100 |
| Minimum Frequency (MHz) | 2700 |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 20 |
| Typical Drain Efficiency (%) | 47 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Supplier Package | CDFM |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 4.22(Max) |
| Package Length | 17.75(Max) |
| Package Width | 9.53(Max) |
| PCB changed | 3 |
| Package Shape | RECTANGULAR |
| Manufacturer | NXP Semiconductors |
| Part Status | Active |
| ECCN Code | EAR99 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 280 |
| Reach Compliance Code | unknown |
| Pin Count | 3 |
| JESD-30 Code | R-CDFP-F2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| DS Breakdown Voltage-Min | 60 V |
| Channel Type | N |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | S BAND |
| Mode of Operation | Pulsed RF |
| RoHS Status | RoHS Compliant |
