TYPE | DESCRIPTION |
ECCN (US) | EAR99 |
Channel Mode | Enhancement |
Number of Elements per Chip | 1 |
Process Technology | LDMOS |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | 13 |
Maximum VSWR | 5 |
Maximum Continuous Drain Current (A) | 3.5 |
Maximum Drain Source Resistance (mOhm) | 1260@6.15V |
Typical Forward Transconductance (S) | 0.81(Min) |
Output Power (W) | 6 |
Typical Power Gain (dB) | 15 |
Maximum Frequency (MHz) | 3100 |
Minimum Frequency (MHz) | 2700 |
Typical Drain Efficiency (%) | 33 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 200 |
AEC Qualified | Unknown |
Supplier Package | CDFM |
Mounting | Surface Mount |
Package Height | 3.63(Max) |
Package Length | 6.93(Max) |
Package Width | 6.93(Max) |
PCB changed | 3 |
Part Status | Obsolete |
Pin Count | 3 |
Configuration | Single |
Channel Type | N |
Mode of Operation | Pulsed RF |
RoHS Status | RoHS Compliant |