TYPE | DESCRIPTION |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
HTS | 8541.29.00.75 |
Channel Mode | Enhancement |
Number of Elements per Chip | 2 |
Process Technology | LDMOS |
Maximum Drain Source Voltage (V) | 65 |
Maximum Gate Source Voltage (V) | 13 |
Maximum Gate Threshold Voltage (V) | 2.25 |
Maximum VSWR | 10 |
Maximum Gate Source Leakage Current (nA) | 120 |
Maximum IDSS (uA) | 1.2 |
Typical Forward Transconductance (S) | 0.41 |
Output Power (W) | 14.2(Typ) |
Typical Power Gain (dB) | 17.5 |
Maximum Frequency (MHz) | 2200 |
Minimum Frequency (MHz) | 1800 |
Typical Drain Efficiency (%) | 33 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 225 |
Mounting | Surface Mount |
Package Height | 3.6 |
Package Width | 9.96 |
Package Length | 20.57 |
PCB changed | 4 |
Supplier Package | HSOP-F |
Packaging | Tape and Reel |
Part Status | Obsolete |
Pin Count | 4 |
Configuration | Dual Common Source |
Channel Type | N |
Mode of Operation | 2-Carrier W-CDMA |