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| TYPE | DESCRIPTION |
| Surface Mount | YES |
| Number of Terminals | 2 |
| Transistor Element Material | SILICON |
| ECCN (US) | EAR99 |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Process Technology | LDMOS |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum VSWR | 10 |
| Maximum Continuous Drain Current (A) | 56 |
| Maximum Drain Source Resistance (mOhm) | 57(Typ)@6.05V |
| Typical Forward Transconductance (S) | 22 |
| Output Power (W) | 60(Typ) |
| Typical Power Gain (dB) | 19.5 |
| Maximum Frequency (MHz) | 960 |
| Minimum Frequency (MHz) | 869 |
| Typical Drain Efficiency (%) | 30.5 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Supplier Package | SOT-502B |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 4.72(Max) |
| Package Length | 20.7(Max) |
| Package Width | 9.91(Max) |
| PCB changed | 3 |
| Package Shape | RECTANGULAR |
| Manufacturer | NXP Semiconductors |
| Part Status | Active |
| ECCN Code | EAR99 |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Pin Count | 3 |
| JESD-30 Code | R-CDFP-F2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| DS Breakdown Voltage-Min | 65 V |
| Channel Type | N |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| Mode of Operation | 2-Carrier W-CDMA |
| RoHS Status | RoHS Compliant |
