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PBLS2002S,115

  • PBLS2002S,115
  • PBLS2002S,115
PBLS2002S,115
BJT Transistors Arrays
NXP USA Inc.
PBLS2002S,115 d
-
8-SOIC (0.154, 3.90mm Width)
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PBLS2002
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type 1 NPN Pre-Biased, 1 PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V / 150 @ 2A 2V
Current - Collector Cutoff (Max) 1μA 100nA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 50V 20V
Current - Collector (Ic) (Max) 100mA 3A
Transition Frequency 100MHz
Frequency - Transition 100MHz
Power Dissipation-Max (Abs) 1.5W
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 4.7k Ω
Turn Off Time-Max (toff) 205ns
Turn On Time-Max (ton) 41ns
RoHS Status ROHS3 Compliant

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PBLS2002S,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from NXP USA Inc. stock available at Utmel
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