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BT169B,126

  • BT169B,126
  • BT169B,126
BT169B,126
SCRs Thyristors
NXP Semiconductors
SCR
-
-
YES
TYPEDESCRIPTION
Factory Lead Time 6 Weeks
Surface Mount NO
Number of Terminals 3
ECCN (US) EAR99
HTS 8541.30.00.80
Maximum Rate of Rise of Off-State Voltage (V/us) 800(Typ)
Maximum Rate of Rise of On-State Current (A/us) 50
Maximum Gate Trigger Voltage (V) 0.8
Maximum Gate Trigger Current (mA) 0.2
Surge Current Rating (A) 9
Maximum Holding Current (mA) 5
Repetitive Peak Reverse Voltage (V) 200
Maximum Gate Peak Inverse Voltage (V) 5
Peak On-State Voltage (V) 1.7@1.2A
Repetitive Peak Forward Blocking Voltage (V) 200
Rated Average On-State Current (A) 0.5
RMS On-State Current (A) 0.8
Repetitive Peak Off-State Current (mA) 0.1
Phase Control No
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 125
Supplier Package SPT
Military No
Mounting Through Hole
Package Height 5.2(Max)
Package Length 4.8(Max)
Package Width 4.2(Max)
PCB changed 3
Package Shape ROUND
Manufacturer WeEn Semiconductor Co Ltd
Part Status Active
ECCN Code EAR99
Additional Feature SENSITIVE GATE
HTS Code 8541.30.00.80
Terminal Position BOTTOM
Terminal Form THROUGH-HOLE
Reach Compliance Code unknown
Pin Count 3
Reference Standard IEC-60134
JESD-30 Code O-PBCY-T3
Number of Elements 1
Configuration SINGLE
JEDEC-95 Code TO-92
Trigger Device Type SCR
Repetitive Peak Off-state Voltage 200 V
Repetitive Peak Reverse Voltage 200 V
RMS On-state Current-Max 0.8 A
DC Gate Trigger Current-Max 0.2 mA
RoHS Status RoHS Compliant

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