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| TYPE | DESCRIPTION |
| Manufacturer: | NXP |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Vds - Drain-Source Breakdown Voltage: | 110 V |
| Operating Frequency: | 0.96 GHz to 1.215 GHz |
| Gain: | 20.3 dB |
| Output Power: | 27.5 W |
| Maximum Operating Temperature: | + 150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | NI-780S |
| Packaging: | Reel |
| Brand: | NXP Semiconductors |
| Configuration: | Single |
| Product Type: | RF MOSFET Transistors |
| Series: | MRF6V12250H |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
| Part # Aliases: | 935317106178 |
| Unit Weight: | 0.168010 oz |
