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| TYPE | DESCRIPTION |
| Manufacturer: | NXP |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Id - Continuous Drain Current: | 2.6 A |
| Vds - Drain-Source Breakdown Voltage: | - 500 mV, 105 V |
| Operating Frequency: | 1.2 GHz to 1.4 GHz |
| Gain: | 17.7 dB |
| Output Power: | 1 kW |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | NI-1230GS-4L-4 |
| Packaging: | Reel |
| Brand: | NXP Semiconductors |
| Number of Channels: | 2 Channel |
| Pd - Power Dissipation: | 909 W |
| Product Type: | RF MOSFET Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Part # Aliases: | 935316224178 |
| Unit Weight: | 0.300472 oz |
