TYPE | DESCRIPTION |
Manufacturer: | NXP |
Product Category: | RF MOSFET Transistors |
RoHS: | Details |
Transistor Polarity: | N-Channel |
Technology: | Si |
Id - Continuous Drain Current: | 154 mA |
Vds - Drain-Source Breakdown Voltage: | - 500 mV, 65 V |
Operating Frequency: | 728 MH to 2700 MHz |
Gain: | 20.9 dB |
Output Power: | 1.26 W |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | PLD-1.5W |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Moisture Sensitive: | Yes |
Number of Channels: | 1 Channel |
Product Type: | RF MOSFET Transistors |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs |
Type: | RF Power MOSFET |
Vgs - Gate-Source Voltage: | - 6 V, 10 V |
Vgs th - Gate-Source Threshold Voltage: | 0.8 V |
Part # Aliases: | 935347325515 |
Unit Weight: | 0.009877 oz |