TYPE | DESCRIPTION |
Manufacturer: | NXP |
Product Category: | RF MOSFET Transistors |
RoHS: | Details |
Transistor Polarity: | Dual N-Channel |
Technology: | Si |
Id - Continuous Drain Current: | 2.1 A |
Vds - Drain-Source Breakdown Voltage: | - 500 mV, 105 V |
Operating Frequency: | 720 MHz to 960 MHz |
Gain: | 17.9 dB |
Output Power: | 107 W |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C |
Mounting Style: | SMD/SMT |
Package / Case: | OM-780-4 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Moisture Sensitive: | Yes |
Number of Channels: | 2 Channel |
Product Type: | RF MOSFET Transistors |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Subcategory: | MOSFETs |
Type: | RF Power MOSFET |
Vgs - Gate-Source Voltage: | - 6 V, 10 V |
Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
Part # Aliases: | 935337372528 |
Unit Weight: | 0.108416 oz |