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| TYPE | DESCRIPTION |
| Manufacturer: | ROHM Semiconductor |
| Product Category: | IGBT Transistors |
| RoHS: | Details |
| Technology: | Si |
| Package / Case: | TO-3PFM |
| Mounting Style: | Through Hole |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| Maximum Gate Emitter Voltage: | 30 V |
| Continuous Collector Current at 25 C: | 45 A |
| Pd - Power Dissipation: | 94 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 175 C |
| Packaging: | Tube |
| Brand: | ROHM Semiconductor |
| Continuous Collector Current Ic Max: | 45 A |
| Gate-Emitter Leakage Current: | 200 nA |
| Product Type: | IGBT Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | IGBTs |
