TYPE | DESCRIPTION |
Manufacturer:
| ROHM Semiconductor |
Product Category:
| MOSFET |
RoHS: | Details |
Technology:
| Si |
Mounting Style:
| Through Hole |
Package / Case:
| TO-247-3 |
Transistor Polarity:
| N-Channel |
Number of Channels:
| 1 Channel |
Vds - Drain-Source Breakdown Voltage:
| 600 V |
Id - Continuous Drain Current:
| 76 A |
Rds On - Drain-Source Resistance:
| 42 mOhms |
Vgs - Gate-Source Voltage:
| - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage:
| 3 V |
Qg - Gate Charge:
| 165 nC |
Minimum Operating Temperature:
| - 55 C |
Maximum Operating Temperature:
| + 150 C |
Pd - Power Dissipation:
| 735 W |
Channel Mode:
| Enhancement |
Packaging:
| Tube |
Brand: | ROHM Semiconductor |
Configuration: | Single |
Fall Time: | 150 ns |
Product Type: | MOSFET |
Rise Time: | 250 ns |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 230 ns |
Typical Turn-On Delay Time: | 75 ns |
Unit Weight: | 0.211644 oz |