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| TYPE | DESCRIPTION |
| Manufacturer: | Nexperia |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-457-6 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 4.7 A |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 9 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 1.7 W |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 |
| Packaging: | Reel |
| Brand: | Nexperia |
| Configuration: | Single |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 8 S |
| Product Type: | MOSFET |
| Rise Time: | 7 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Part # Aliases: | 934661388115 |
