TYPE | DESCRIPTION |
Source Content uid: | BF998WR |
Manufacturer Part Number: | BF998WR |
Pbfree Code: | Yes |
Rohs Code: | Yes |
Part Life Cycle Code: | Obsolete |
Package Description: | MICRO MINIATURE, PLASTIC PACKAGE-4 |
Pin Count: | 4 |
Reach Compliance Code: | compliant |
ECCN Code: | EAR99 |
Manufacturer: | NXP Semiconductors |
Risk Rank: | 5.27 |
Additional Feature: | LOW NOISE |
Case Connection: | SOURCE |
Configuration: | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min: | 12 V |
Drain Current-Max (Abs) (ID): | 0.03 A |
Drain Current-Max (ID): | 0.03 A |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code: | R-PDSO-G4 |
JESD-609 Code: | e3 |
Number of Elements: | 2 |
Number of Terminals: | 4 |
Operating Mode: | DUAL GATE, DEPLETION MODE |
Operating Temperature-Max: | 150 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | 260 |
Polarity/Channel Type: | N-CHANNEL |
Power Dissipation-Max (Abs): | 0.3 W |
Qualification Status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
Terminal Form: | GULL WING |
Terminal Position: | DUAL |
Time@Peak Reflow Temperature-Max (s): | 30 |
Transistor Application: | AMPLIFIER |
Transistor Element Material: | SILICON |