TYPE | DESCRIPTION |
Source Content uid: | MW6S004NT1 |
Manufacturer Part Number: | MW6S004NT1 |
Rohs Code: | Yes |
Part Life Cycle Code: | Active |
Package Description: | SMALL OUTLINE, R-PQSO-N4 |
Reach Compliance Code: | unknown |
ECCN Code: | EAR99 |
HTS Code: | 8541.29.00.75 |
Manufacturer: | NXP Semiconductors |
Risk Rank: | 1.19 |
Case Connection: | SOURCE |
Configuration: | SINGLE |
DS Breakdown Voltage-Min: | 68 V |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band: | L BAND |
JESD-30 Code: | R-PQSO-N4 |
JESD-609 Code: | e3 |
Moisture Sensitivity Level: | 3 |
Number of Elements: | 1 |
Number of Terminals: | 4 |
Operating Mode: | ENHANCEMENT MODE |
Operating Temperature-Max: | 150 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | 260 |
Polarity/Channel Type: | N-CHANNEL |
Qualification Status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
Terminal Form: | NO LEAD |
Terminal Position: | QUAD |
Time@Peak Reflow Temperature-Max (s): | 40 |
Transistor Application: | AMPLIFIER |
Transistor Element Material: | SILICON |