TYPE | DESCRIPTION |
Source Content uid: | BLF6G22LS-130 |
Manufacturer Part Number: | BLF6G22LS-130 |
Pbfree Code: | Yes |
Rohs Code: | Yes |
Part Life Cycle Code: | Transferred |
Package Description: | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
Pin Count: | 2 |
Reach Compliance Code: | unknown |
ECCN Code: | EAR99 |
Manufacturer: | NXP Semiconductors |
Risk Rank: | 5.25 |
Case Connection: | SOURCE |
Configuration: | SINGLE |
DS Breakdown Voltage-Min: | 65 V |
Drain Current-Max (Abs) (ID): | 34 A |
Drain Current-Max (ID): | 34 A |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band: | S BAND |
JESD-30 Code: | R-CDFP-F2 |
Number of Elements: | 1 |
Number of Terminals: | 2 |
Operating Mode: | ENHANCEMENT MODE |
Operating Temperature-Max: | 225 °C |
Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Package Shape: | RECTANGULAR |
Package Style: | FLATPACK |
Peak Reflow Temperature (Cel): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Qualification Status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Form: | FLAT |
Terminal Position: | DUAL |
Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
Transistor Application: | AMPLIFIER |
Transistor Element Material: | SILICON |