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| TYPE | DESCRIPTION |
| Source Content uid: | FGD3N60UNDF |
| Manufacturer Part Number: | FGD3N60UNDF |
| Brand Name: | ON Semiconductor |
| Pbfree Code: | Yes |
| Part Life Cycle Code: | Active |
| Package Description: | SMALL OUTLINE, R-PSSO-G2 |
| Manufacturer Package Code: | 369AS |
| Reach Compliance Code: | not_compliant |
| ECCN Code: | EAR99 |
| Manufacturer: | onsemi |
| Risk Rank: | 0.95 |
| Case Connection: | COLLECTOR |
| Collector Current-Max (IC): | 6 A |
| Collector-Emitter Voltage-Max: | 600 V |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max: | 8.5 V |
| Gate-Emitter Voltage-Max: | 20 V |
| JEDEC-95 Code: | TO-252 |
| JESD-30 Code: | R-PSSO-G2 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 2 |
| Operating Temperature-Max: | 150 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 60 W |
| Subcategory: | Insulated Gate BIP Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| Terminal Form: | GULL WING |
| Terminal Position: | SINGLE |
| Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Application: | MOTOR CONTROL |
| Transistor Element Material: | SILICON |
| Turn-off Time-Nom (toff): | 146 ns |
| Turn-on Time-Nom (ton): | 7.4 ns |
