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| TYPE | DESCRIPTION |
| Source Content uid: | FGA60N65SMD |
| Manufacturer Part Number: | FGA60N65SMD |
| Brand Name: | ON Semiconductor |
| Pbfree Code: | Yes |
| Part Life Cycle Code: | Active |
| Package Description: | FLANGE MOUNT, R-PSFM-T3 |
| Manufacturer Package Code: | 340BZ |
| Reach Compliance Code: | compliant |
| ECCN Code: | EAR99 |
| Manufacturer: | onsemi |
| Risk Rank: | 0.93 |
| Additional Feature: | LOW CONDUCTION LOSS |
| Collector Current-Max (IC): | 120 A |
| Collector-Emitter Voltage-Max: | 650 V |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Fall Time-Max (tf): | 68 ns |
| Gate-Emitter Thr Voltage-Max: | 6 V |
| Gate-Emitter Voltage-Max: | 20 V |
| JESD-30 Code: | R-PSFM-T3 |
| JESD-609 Code: | e3 |
| Number of Elements: | 1 |
| Number of Terminals: | 3 |
| Operating Temperature-Max: | 175 °C |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | FLANGE MOUNT |
| Peak Reflow Temperature (Cel): | NOT SPECIFIED |
| Polarity/Channel Type: | N-CHANNEL |
| Power Dissipation-Max (Abs): | 600 W |
| Rise Time-Max (tr): | 70 ns |
| Subcategory: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| Terminal Finish: | Tin (Sn) |
| Terminal Form: | THROUGH-HOLE |
| Terminal Position: | SINGLE |
| Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
| Transistor Application: | POWER CONTROL |
| Transistor Element Material: | SILICON |
